| PART |
Description |
Maker |
| LT5503EFEPBF |
1.2GHz to 2.7GHz Direct IQ Modulator and Mixer; Package: TSSOP; No of Pins: 20; Temperature Range: -40°C to 125°C 1200 MHz - 2700 MHz RF/MICROWAVE I/Q MODULATOR
|
Linear Technology, Corp.
|
| SPA1526Z |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
|
RFMD
|
| MAX2021 |
High-Dynamic-Range, Direct Up-/Downconversion 650MHz to 1200MHz Quadrature Mod/Demod
|
Maxim Integrated Products, Inc.
|
| MAX2023V1 MAX2023ETXT |
High-Dynamic-Range, Direct Up-/Downconversion 1500MHz to 2500MHz Quadrature Mod/Demod
|
Maxim Integrated Products
Maxim Integrated Produc...
|
| LTC4401-2 LTC4401-1 |
Dual RF Power Controller with 450kHz Loop BW (800MHz to 2GHz)
ThinSOT RF Power Controller with 450kHz Loop BW (800MHz to 2.7GHz)
|
Linear
|
| SY87724L SY87724LH1 |
3.3V AnyRateTM MUX/DEMUX Up to 2.7GHz
From old datasheet system
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
|
| 05738 05738-2 |
HEATSINK CROSSFLOW, MINI MOD (40 HG, SLOTTED) 散热器横流，迷你国防部（40汞，开槽）
HEATSINK CROSSFLOW MINI MOD (40 HG SLOTTED)
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LTC6401-8 LTC6401CUD-8-PBF LTC6401CUD-8-TRPBF LTC6 |
2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 85°C 1-CH 16-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQCC16
2.2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz
|
Linear Technology, Corp.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SY89872U0708 |
2.5V, 2GHz ANY DIFF. IN-TO-LVDS
|
Micrel Semiconductor
|
